Charge-State Control of Modified Divacancies in Silicon Carbide

Modified divacancies in silicon carbide are promising candidates for single-photon emitters and spin qubits. Understanding and controlling their charge states are crucial for quantum information applications. Here, we demonstrate deterministic charge-state control of modified divacancies in 4H polytype silicon carbide. By employing a 1064 nm laser for ionization and a 914 nm laser for recharging, we realize reversible conversion between the neutral and negative charge states. The ionization and recharging dynamics are quantitatively characterized by deriving the corresponding rates as functions of the laser power. Furthermore, we reveal spin-dependent ionization processes for distinct types of modified divacancies, confirming the coupling between spin and charge dynamics in these systems. Our results provide key insights into the charge-state physics of modified divacancies and pave the way toward spin readout via spin-to-charge conversion or photocurrent detection.