Artificial Modulation of the CeO 2 Nanoparticle Tunneling Junction Array

The precise modulation of nanoparticles represents a critical step toward programmable nanodevice architectures and functional material systems. Here, we demonstrate an artificial CeO 2 nanoparticle modulation platform, enabling area-selective manipulation and programmable tunability of the CeO 2 nanoparticle tunneling behavior. Utilizing atomic force microscopy lithography, CeO 2 nanoparticles were attached, detached, and repositioned with nanoscale precision on both insulating and metallic substrates, forming ordered architectures. Sequential strain engineering induces deterministic narrowing of the local density of states, deriving the electronic switching at the single-particle level. Furthermore, vertical 3D stacking of CeO 2 nanoparticle tunneling junctions exhibits designable resonant tunneling and negative differential resistance characteristics, with the threshold strain systematically decreasing with the stacking tier. In conclusion, we envision that our artificial modulation platform provides a systematic foundation for nanoelectronic systems and functional tunneling devices within artificial nanoparticle assemblies.