Mie-Void-Enabled WS 2 Excitonic Emitters with Nanoscale Footprints

Owing to their strong excitonic effects, monolayer transition metal dichalcogenides (1L TMDs) are highly promising for next-generation excitonic light-emitting devices. To enhance exciton emission, 1L TMDs are typically integrated with dielectric optical resonators, which, however, results in a large footprint and/or interface-induced exciton emission suppression. To overcome these fundamental issues, we herein present the experimental demonstration of nanoscale tungsten disulfide (WS 2 ) excitonic light-emitting devices enabled by Mie voids. Such a Mie void not only supports a localized Mie resonance in the nanoscale air hole to enhance exciton emission but also suspends 1L WS 2 in the air to eliminate the emission suppression from the contact interface. When we leverage the nanoscale field localization within Mie voids, a high-resolution light-emitting display is realized with a pixel size of ∼1.12 μm. Our work opens a door to nanoscale 2D semiconductor light sources with potential applications in a high-resolution light-emitting display.