Designing Extremely Low-Power Topological Transistors with 1T′-MoS 2 and HZO for Cryogenic Applications
Abstract
Large-scale quantum computing requires cryogenic electronic controllers such as control/readout and routing circuits. However, current technologies face high-power dissipation problems, hindering large-scale qubit integration. Here, we theoretically propose extremely low-power cryogenic topological transistors, i.e., negative-capacitance topological insulator field-effect transistors (NC-TIFETs). By combining a gate-field-induced two-dimensional 1T′-molybdenum disulfide (MoS 2 ) topological channel with a hafnium–zirconium oxide (HZO) ferroelectric gate insulator, NC-TIFETs exhibit an extremely steep-slope transfer curve and ultrahigh transconductance at low drain voltage ( V D ). Therefore, NC-TIFETs are a compelling candidate for minimizing power dissipation in the cryogenic electronic interfaces essential for large-scale quantum computing systems.
Fields of Study & Subjects
Ferroelectric and Negative Capacitance Devices
Topological Materials and Phenomena
2D Materials and Applications
Publication details
- Journal / source
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Volume
- 26
- Issue
- 7
- Pages
- 2684–2690
- Publication date
- 2 February 2026
- Language
- EN