Low-Temperature Growth of High-Quality Bi 2 O 2 Se Nanosheets Enabling Weak-Light Detection with Ultralow Dark Current
Abstract
Bi 2 O 2 Se is an emerging n-type semiconductor, but conventional growth methods often rely on high temperatures or complex multisource systems that introduce defects and limit device integration. Herein, we report a simplified and modified physical vapor deposition (PVD) strategy enabling the growth of single-crystal Bi 2 O 2 Se nanosheets at a lower temperature of 500 °C. The self-powered photoelectric detector with an asymmetric structure was fabricated using a Bi 2 O 2 Se nanosheet as channel material, exhibiting an ultralow dark current of ∼10 fA, weak-light detection capability (50 nW/cm 2 ), and detectivity up to 1.06 × 10 13 Jones. The devices also show fast response time and excellent long-term stability with
Fields of Study & Subjects
Advanced Photocatalysis Techniques
Electronic and Structural Properties of Oxides
2D Materials and Applications
Publication details
- Journal / source
- Nano Letters
- Publisher
- American Chemical Society (ACS)
- Volume
- 26
- Issue
- 6
- Pages
- 2307–2315
- Publication date
- 3 February 2026
- Language
- EN