Direct Nanoscale Mapping of Band Alignment in Single-Layer Semiconducting Lateral Heterojunctions

Nano Letters 2026

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Authors: Chakradhar Sahoo, Suman Kumar Chakraborty, A. Kousika, Alfred J. H. Jones, Manas Sharma, Thomas S. Nielsen, Zhihao Jiang, Ihsan Ahmed Kolasseri, Subhadip Das, M. D. Watson, Céphise Cacho, Kenji Watanabe
+6 more Takashi Taniguchi, Yong P. Chen, Tony F. Heinz, Ananth Govind Rajan, Prasana Kumar Sahoo, Søren Ulstrup
DOI: 10.1021/acs.nanolett.6c00590
Cited by: 4
References: 69

Abstract

LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

Fields of Study & Subjects

Topological Materials and Phenomena Surface and Thin Film Phenomena Superconductivity in MgB2 and Alloys

Publication details

Journal / source
Nano Letters
Publisher
American Chemical Society (ACS)
Volume
26
Issue
15
Pages
5178–5186
Publication date
13 April 2026
Language
EN