Scalable Quantum Current Source on Commercial CMOS Process Technology

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Authors: Ajit Kumar Dash, Suyash Pati Tripathi, D. Georgakopoulos, MengKe Feng, Steve A. Yianni, Ensar Vahapoglu, Md. Mamunur Rahman, Shai Bonen, Owen J. Brace, Jonathan Y. Huang, Wee Han Lim, K. W. Chan
+8 more Will Gilbert, Arne Laucht, Andrea Morello, André Ricardo de Carvalho Saraiva, Christopher C. Escott, Sorin P. Voinigescu, Andrew S. Dzurak, Tuomo Tanttu
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References: 53

Abstract

Many technologies require a precise electrical current standard that at present is achieved indirectly through voltage and resistance standards. Silicon-based charge pumps could provide a direct electrical standard that scales inherently through their compatibility with complementary metal oxide semiconductor (CMOS) fabrication methods. However, coherent quantized charge transfer has so far been demonstrated only in nanoscale devices that are custom-fabricated in academic cleanrooms or research technology foundries. Here, we show that a CMOS device manufactured with a commercial 22 nm process node can be used to realize a quantum current standard in the International System of Units (SI). We measure the accuracy of two parallel-connected charge pumps with reference to SI-traceable voltage and resistance standards in a pumped helium system. This translation of low-temperature quantum effect device concepts from scientific research into an industrial fabrication context opens a path toward advancing quantum electrical metrology and quantum hardware engineering.

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Integrated Circuits and Semiconductor Failure Analysis Quantum-Dot Cellular Automata

Publication details

Journal / source
Nano Letters
Publisher
American Chemical Society (ACS)
Volume
26
Issue
26
Pages
8505–8512
Publication date
24 June 2026
Language
EN