Interfacial Conductive Pathway Enabled Self-Rectifying Ferroelectric Memristor for Neuromorphic Applications

Nano Letters 2026

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Authors: Junxin Cheng, Yu Yan, Xiangyuan Li, Hongwei Ge, X.C. Li, Chuan Liu, Takeo Minari, Xuying Liu, Li Zhang, Qingqing Sun
DOI: 10.1021/acs.nanolett.6c01429
Cited by: 1
References: 38

Abstract

Integrating nonvolatile resistive switching (RS) and rectification in a single two-terminal device is critical for suppressing sneak currents in high-density crossbar arrays, yet achieving this dual functionality at low operating voltages (

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Advanced Sensor and Energy Harvesting Materials

Publication details

Journal / source
Nano Letters
Publisher
American Chemical Society (ACS)
Volume
26
Issue
21
Pages
7067–7075
Publication date
18 May 2026
Language
EN