Remote CF 4 Plasma Fluorination of Graphene for Low-Damage Spin–Orbit Engineering

Nano Letters 2026

View at publisher
Authors: Chae-Gun Lee, Seung-Hyun Shin, Changmin Choi, Seong Jang, Hee Cheul Choi, Gil‐Ho Lee
DOI: 10.1021/acs.nanolett.6c01475
Cited by: 1
References: 37

Abstract

C-F functionalization while minimizing vacancy formation. Nonlocal transport measurements show that the nonlocal resistance increases in fluorinated graphene and decays exponentially with channel length, consistent with spin diffusion and yielding a spin relaxation length of ∼0.4 μm. Within the Elliott-Yafet framework, we estimate an effective SOC energy scale of 4-9 meV. These results provide a Raman-validated, tunable process route for enhancing SOC in graphene while suppressing vacancy damage.

Fields of Study & Subjects

Plasma Diagnostics and Applications Graphene research and applications Silicone and Siloxane Chemistry

Publication details

Journal / source
Nano Letters
Publisher
American Chemical Society (ACS)
Volume
26
Issue
25
Pages
8224–8230
Publication date
16 June 2026
Language
EN