Correction to “Structural Properties of Hf 0.5 Zr 0.5 O 2 Integrated on Silicon”

ACS Applied Electronic Materials 2026 Open access

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Authors: Kit de Hond, Mart Salverda, Majid Ahmadi, Evert Pieter Houwman, Beatriz Noheda, Bart Jan Kooi, Guus Rijnders, Gertjan Koster
DOI: 10.1021/acsaelm.5c02645
Cited by: 0

Abstract

[This corrects the article DOI: 10.1021/acsaelm.5c00753.].

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices MXene and MAX Phase Materials Semiconductor materials and devices

Publication details

Journal / source
ACS Applied Electronic Materials
Volume
8
Issue
2
Pages
1026–1026
Publication date
7 January 2026
Language
EN