Resistive Switching Behaviors in Vertically Aligned MoS 2 Films with Cu, Ag, and Au Electrodes

Neuromorphic computing circuits can be realized by using memristors based on low-dimensional materials enabling enhanced metal diffusion for resistive switching. Here, we investigate memristive properties of vertically aligned MoS 2 (VA-MoS 2 ) films with three different metal electrodes: Ag, Cu, and Au. Despite having the same active material, all three metals show distinct switching behavior, which is crucial for neuromorphic computing applications: Ag enables volatile switching, Cu demonstrates stable nonvolatile switching with retention over 2500 s, and Au shows no memristive response. Cu devices show abrupt resistance changes and a significant increase of copper content upon biasing, indicative of stable nonvolatile switching based on filament formation and rupture. About 85% of Ag and Cu devices exhibit reliable memristor behavior. Our findings provide valuable insights into the memristive switching mechanism in VA-MoS 2 and present a promising avenue for facile fabrication of neuromorphic circuits by employing a set of different metals on a single active material.