Al-Doped Rutile TiO 2 with Y 2 O 3 –ZrO 2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors

Tae Kyun Kim; Heewon Paik; Jonghoon Shin; Haewon Song; Dae Seon Kwon; Cheol Seong Hwang

doi:10.1021/acsaelm.6c00060

Al-Doped Rutile TiO 2 with Y 2 O 3 –ZrO 2 Stacks Achieving Thin Thickness and Low Leakage for Dynamic Random-Access Memory Capacitors

ACS Applied Electronic Materials 2026 Open access

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Authors: Tae Kyun Kim, Heewon Paik, Jonghoon Shin, Haewon Song, Dae Seon Kwon, Cheol Seong Hwang

DOI: 10.1021/acsaelm.6c00060

Cited by: 1

References: 53

Abstract

High Resolution Image Download MS PowerPoint Slide This study investigates Al-doped TiO 2 /Y 2 O 3 /ZrO 2 trilayer capacitors grown by atomic layer deposition as a feasible material to scale high- k dielectric films for dynamic random-access memory (DRAM) capacitors. An ultrathin Y 2 O 3 insertion layer (

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Piezoelectric Materials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source: ACS Applied Electronic Materials
Publisher: American Chemical Society (ACS)
Volume: 8
Issue: 5
Pages: 2174–2186
Publication date: 19 February 2026
Language: EN

References 53