Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor
Fields of Study & Subjects
2D Materials and Applications
Topological Materials and Phenomena
Transition Metal Oxide Nanomaterials
Publication details
- Journal / source
- ACS Applied Electronic Materials
- Publisher
- American Chemical Society (ACS)
- Volume
- 8
- Issue
- 9
- Pages
- 4052–4064
- Publication date
- 30 April 2026
- Language
- EN