Dual-Anode Interfacial Engineering for High-Performance ITO-Free Organic Photovoltaic and Photodetector Devices

Developing indium tin oxide (ITO)-free devices is crucial for the large-scale commercialization of organic photovoltaics (OPVs) and organic photodetectors (OPDs). A major challenge is the low shunt resistance ( R sh ) caused by pinholes in the active layer, which leads to significant leakage current and limits the performance of both devices. To address these issues, this work introduces a dual-anode interfacial engineering strategy using a solution-processed H X MoO 3 interlayer to efficiently repair pinhole defects in the ITO-free devices and enhances R sh by nearly 3 orders of magnitude and suppresses the trap-assisted recombination. As a result, for OPVs, the power conversion efficiency under 1000 lx illumination improves from 15.4% to 17.4%, while large-area devices (2.84 cm 2 ) achieve a PCE of 15.0% at 1000 lx. For OPDs, the specific detectivity D * reaches 2.93 × 10 13 Jones, nearly 1 order of magnitude higher than the control device. The strategy demonstrates universality across different active layer systems, offering a scalable and efficient approach to enabling high-performance, low-cost ITO-free organic optoelectronics.