High-Performance Blue Quantum Dot Light-Emitting Diodes via ZnSe-Engineered Core/Shell Quantum Dots
Abstract
Quantum dot light-emitting diodes (QLEDs) have emerged as strong contenders for next-generation display technologies. However, the commercialization of blue QLEDs has been severely hindered by the inherent wide band gap of blue quantum dots (QDs), which results in a high hole injection barrier and imbalanced carrier injection. Herein, we demonstrate high-efficiency and high-luminance blue QLEDs by engineering gradient core/shell ZnCdSe/ZnSe/ZnSeS/ZnS QDs with a ZnSe intermediate shell layer. The ZnSe interlayer not only effectively passivates surface defects but also facilitates balanced carrier injection. This strategy achieves a remarkable maximum luminance of 54,554 cd m –2 and an external quantum efficiency (EQE) of 20.6%, representing a significant advancement in device performance. This work provides a strategy for developing high-performance blue QLEDs.
Fields of Study & Subjects
Quantum Dots Synthesis And Properties
Silicon Nanostructures and Photoluminescence
Carbon and Quantum Dots Applications
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 10
- Pages
- 15647–15653
- Publication date
- 2 March 2026
- Language
- EN