Ultrathin ZrO 2 Seed Layers for Low-Temperature Orthorhombic Ferroelectric Hf 1– x Zr x O 2

ACS Applied Materials & Interfaces 2026

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Authors: Kyong Jae Kim, Eun Seo Jo, Madani Labed, Chowdam Venkata Prasad, Mohammad Tauquir A. S. Shaikh, Myeong Geun Yu, Kwang Min Jeong, You Seung Rim
DOI: 10.1021/acsami.5c17813
Cited by: 3
References: 44

Abstract

Ferroelectric Hf 1– x Zr x O 2 has emerged as a promising material for next-generation nonvolatile memory and logic applications due to its complementary metal-oxide-semiconductor (CMOS) compatibility and scalability. However, stabilizing the ferroelectric orthorhombic-phase at back-end-of-line (BEOL)-compatible temperatures (

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Ferroelectric and Piezoelectric Materials Semiconductor materials and devices

Publication details

Journal / source
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Volume
18
Issue
5
Pages
8383–8392
Publication date
2 February 2026
Language
EN