Polarizable Thiol–Ene Cross-Linked Nitrile Dielectrics for Stretchable Low-Voltage Neuromorphic Transistors with Acoustic Classification

ACS Applied Materials & Interfaces 2026 Open access

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Authors: Chang-Jing Liu, Shu-Wei Hsiao, Qun‐Gao Chen, Qi-An Hong, Y H Lin, Chu-Chen Chueh, NG Chan‐Tat, Ting-Ting Chang, Seong H. Kim, Yu-Cheng Chiu, Wen-Ya Lee
DOI: 10.1021/acsami.5c18342
Cited by: 1
References: 24

Abstract

High Resolution Image Download MS PowerPoint Slide A stretchable, high- k dielectric material based on thiol–ene-cross-linked nitrile-butadiene rubber (NBR) for synaptic transistors is demonstrated. We investigated NBR formulations cross-linked with three thiol cross-linkers. The thiol–ene-cross-linked NBR dielectrics achieve a high dielectric constant ( k = 14.6), enabling low-voltage transistor operation (

Fields of Study & Subjects

Advanced Memory and Neural Computing Advanced Sensor and Energy Harvesting Materials Advanced Materials and Mechanics

Publication details

Journal / source
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Volume
18
Issue
1
Pages
2188–2199
Publication date
5 January 2026
Language
EN