A p-Type Wide Bandgap Ni x In 1– x O 1+δ Oxide Alloy with Enhanced Hole Mobility for High Rectifying p–n Heterojunction Diodes
Abstract
Developing high-performance p-type wide bandgap oxide is a critical challenge for advanced electronics. Here, we report the successful synthesis of Ni x In 1– x O 1+δ alloy films via room-temperature magnetron cosputtering. Our alloying strategy directly addresses the long-standing low mobility issue in NiO by utilizing band structure engineering, specifically by alleviating the strong localization of its valence band maximum (VBM) through In orbital interaction. Through composition tuning, we achieved tunable conductivity from semi-insulating to robust p-type, and even degenerate p-type at high Ni content. The optimal alloy ( x ∼ 0.92) exhibited a significantly improved hole mobility of ∼0.84 cm 2 V –1 s –1, substantially exceeding that of conventional p-type NiO (
Fields of Study & Subjects
Transition Metal Oxide Nanomaterials
Thin-Film Transistor Technologies
ZnO doping and properties
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 3
- Pages
- 5443–5454
- Publication date
- 12 January 2026
- Language
- EN