Enhancing the Optoelectronic Performance of MoSe 2 Nanosheets/Si Heterojunctions with Graphene Electrodes
Abstract
%. The device demonstrates broadband photodetection capability across the visible to near-infrared spectrum, featuring the fastest measured rise and fall times of 810 and 950 μs at 700 nm wavelength. Furthermore, temperature-dependent measurements reveal a significant impact on optoelectronic properties: At low temperatures, the photoresponse performance deteriorates due to the reduction of the effective barrier height within the device.
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Photonic and Optical Devices
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 4
- Pages
- 7083–7091
- Publication date
- 22 January 2026
- Language
- EN