How ALD Settings May Affect the Chemical Structure of the (Zn 1– x Sn x )O y /Wide-Gap (Ag,Cu)GaSe 2 Thin-Film Solar Cell Interface
Abstract
High Resolution Image Download MS PowerPoint Slide In this work, the effect of different atomic layer deposition (ALD) settings on the interface formation between ALD-grown (Zn 1– x Sn x )O y (ZTO) buffers with varying [Sn]/([Sn]+[Zn]) composition and wide-band gap silver-alloyed CuGaSe 2 (ACGSe) absorbers is investigated using X-ray fluorescence, transmission electron microscopy, and synchrotron-based soft and hard X-ray photoelectron spectroscopy. For buffer layers prepared in an industry-scale ALD reactor, we discover the formation of an interlayer best described by a mixture of ZnO with a minor (
Fields of Study & Subjects
Chalcogenide Semiconductor Thin Films
Copper-based nanomaterials and applications
Thin-Film Transistor Technologies
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 3
- Pages
- 6180–6190
- Publication date
- 16 January 2026
- Language
- EN