Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability
Abstract
High Resolution Image Download MS PowerPoint Slide Amorphous oxide semiconductors have become the industry standard for display backplanes, but their limited mobility necessitates complex low-temperature polycrystalline oxide (LTPO) stacks, increasing cost and reducing yield. To realize a practical oxide-only backplane that can serve as both drive and switching transistors, a channel combining high mobility, low off current, and robust stability is required. Here, we report zinc-free crystalline indium–gallium oxide (IGO) thin-film transistors (TFTs) that crystallize below 400 °C with preferential (222) orientation. By tuning the In:Ga ratio, an amorphous-to-crystalline transition is achieved, enhancing mobility to 83.3 cm 2 V –1 s –1 while maintaining an off-current of ≈10 –13 A. The optimized crystalline IGO TFTs (In:Ga = 12:3) exhibit the smallest threshold-voltage shift (
Fields of Study & Subjects
Thin-Film Transistor Technologies
Ga2O3 and related materials
Advanced Sensor and Energy Harvesting Materials
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 8
- Pages
- 13100–13110
- Publication date
- 19 February 2026
- Language
- EN