Unraveling and Compensating Surface Vanadium Vacancies in BiVO 4 Photoanodes via a Hydrothermal Diffusion Strategy for Enhanced Photoelectrochemical Water Oxidation

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Authors: Xiaokang Wan, Xiaoqian Luo, Gezhong Liu, Hongchu Li, Guanghui Zhu, Xiangjiu Guan, Haitao Wang, Fazhi Xie, Desiree Mae Prado, Clemens Burda
Cited by: 3
References: 47

Abstract

Although cocatalysts have been employed to enhance the photoelectrochemical (PEC) performance of BiVO 4, it remains unclear whether the improvements primarily arise from suppressed charge recombination or accelerated surface oxygen evolution reaction (OER) kinetics, as the role of surface defects in BiVO 4 is still poorly understood. Herein, we report a hydrothermal diffusion strategy to construct a hybrid BVO(V)/VO x photoanode, simultaneously introducing V 5+ into the BiVO 4 lattice during the VO x deposition process, effectively compensating for surface vanadium vacancies. Comprehensive analyses reveal that the PEC enhancement primarily originates from suppressed surface recombination rather than merely improved OER kinetics. The optimized dual-overlayer BVO(V)/VO x /FeNiO x photoanode demonstrates a photocurrent density of 5.82 mA cm –2 at 1.23 V vs RHE, which is 5.18 times higher than that of pristine BiVO 4, achieving near-unity charge separation efficiency and excellent long-term durability. These findings suggest that surface vanadium vacancies are the primary cause of interfacial charge recombination in BiVO 4, and hydrothermal V-source diffusion offers a viable strategy for defect compensation and performance enhancement. This work reveals the underlying nature of surface defect states in BiVO 4 and offers a robust surface engineering strategy for photoanodes in solar fuel applications.

Fields of Study & Subjects

Advanced Photocatalysis Techniques Iron oxide chemistry and applications TiO2 Photocatalysis and Solar Cells

Publication details

Journal / source
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Volume
18
Issue
4
Pages
6963–6974
Publication date
21 January 2026
Language
EN