Defect Engineering in Atomic-Layer-Deposited Cerium Oxide

High Resolution Image Download MS PowerPoint Slide This study explores the role of atomic layer deposition (ALD) as an enabling technique for the defect engineering of catalytically active ultrathin deposits. In particular, we demonstrate the feasibility of tuning the O/Ce ratio in thermal ALD-based cerium oxide layers grown on silicon-based or alumina substrates by using the organometallic precursor tris(N, N’-diisopropyl-2-dimethylamido-guanidinato)cerium(III) ([Ce(dpdmg) 3 ]) with H 2 O, O 2, or O 3 as coreactants. As revealed by in situ X-ray photoelectron spectroscopy (XPS), the Ce 3+ concentration, i.e., the concentration of oxygen vacancies, depends strongly on three factors: the type of oxygen source, the chosen substrate, and the film thickness. The fixation of Ce 3+ states during the early stages of growth is primarily determined by interface formation and the appearance of silicate and aluminate species, along with changes in morphology and surface-to-volume ratio. For thicker deposits (>5 nm), the intrinsic oxygen vacancies are coreactant-dependent. Furthermore, the chosen oxygen source also influences the morphology of ultrathin deposits, enabling potential surface functionalization with ceria nanoislands of varying composition and size. We point to a likely connection between this chemical and morphological tuning and changes in the ALD reaction pathway. The evolution of different nitrogen and carbon species depends on the oxygen source and the number of ALD cycles, indicating a shift in the ALD reaction mechanism from ligand exchange using H 2 O to ligand combustion for O 3 . The comprehensive investigation of these growth parameters is crucial for tailoring film properties via precise defect engineering.