Achieving zT ≥ 1.0 in a Cd 3 P 2 -Based System via Alloying Minor Arsenic
Abstract
In this work, we report the enhanced thermoelectric performance of the Cd 3 P 2 system achieved through alloying minor arsenic. The Cd 3 P 2 -based material (Cd 3 P 1.8 As 0.2 ) achieves a peak zT exceeding 1.0 and an average zT of 0.59, comprehensively surpassing the performance of the pristine Cd 3 P 2 compound. Such enhanced performance is attributed to the partial decoupling between electrical and thermal transport, where the reduced effective mass enhances carrier mobility, while As-induced defect scattering and increased lattice anharmonicity effectively suppress the lattice thermal conductivity. Theoretical analysis suggests further potential for improvement, thereby expanding the application prospects of this system.
Fields of Study & Subjects
Advanced Thermoelectric Materials and Devices
Thermal Radiation and Cooling Technologies
Thermal Expansion and Ionic Conductivity
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 5
- Pages
- 8234–8241
- Publication date
- 30 January 2026
- Language
- EN