Electrically Tunable WSe 2 /α-In 2 Se 3 van der Waals Ferroelectric Heterostructure for Reconfigurable Photodetection and Neuromorphic Computing

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Authors: Han Chen, Yufeng Ning, Y.B. Chen, Jinjian Yan, Jie Chen, Liang Liu, Yinfeng Long, Siwen Zhang, Kai Liu, Mingfeng Chen, Jinxiu Zhao, Mengwei Si
+4 more Xinwei Zhang, Yishu Zhang, Du Xiang, Lin Wang
Cited by: 1
References: 62

Abstract

The growing demand for compact and energy-efficient hardware in artificial intelligence and edge computing calls for multifunctional electronic systems beyond conventional architectures. van der Waals (vdW) ferroelectric semiconductors, which couple switchable polarization with tunable carrier transport, offer a promising avenue for reconfigurable electronics. Here, we demonstrate a WSe 2 /α-In 2 Se 3 vdW heterostructure that enables dynamic and nonvolatile reconfiguration of electrical functionality within a single device. Through bias-mediated control of ferroelectric polarization and the associated interfacial carrier redistribution, the heterostructure exhibits dual-mode operation: as a high-performance photodetector with a detectivity exceeding 10 12 Jones and as a nonvolatile memory element. Furthermore, the device emulates biological synaptic plasticity, supporting the implementation of artificial neural networks (ANNs) that achieve 96.76% recognition accuracy on the MNIST data set. This work establishes a versatile and electrically reconfigurable platform based on vdW ferroelectric heterojunctions, enabling dual-mode operation for photodetection and neuromorphic computing.

Fields of Study & Subjects

2D Materials and Applications Advanced Sensor and Energy Harvesting Materials Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Volume
18
Issue
8
Pages
12828–12837
Publication date
23 February 2026
Language
EN