Inhomogeneous Charge Carrier Density in Wafer-Scale MoS 2 Caused by Locally Varying Substrate Doping
Abstract
Metal-organic chemical vapor deposition is the most promising approach to synthesizing wafer-scale transition metal dichalcogenide (TMDC) monolayers, a key requirement for implementing TMDCs in future electronics. Hereby, the control of doping caused by either defect formation or remote doping from the substrate or the environment is a main challenge. In this work, we reveal local variations of the charge carrier density on wafer-scale MoS 2 monolayers with crystalline domains larger than 50 μm, grown via MOCVD on c-plane sapphire. The charge variations occur on a submicrometer length scale, altering the ratio between trion and neutral exciton and the MoS 2 working function, respectively. We identified sapphire surface anomalies to be responsible for locally varying substrate doping, a hypothesis that is confirmed by a dedicated transfer experiment of MoS 2 onto a Si/SiO 2 substrate.
Fields of Study & Subjects
2D Materials and Applications
Graphene research and applications
Nanowire Synthesis and Applications
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 14
- Pages
- 21204–21211
- Publication date
- 1 April 2026
- Language
- EN