Optimized SnO 2 Thin Films: Correlating Solution Chemistry and Deposition Conditions with Optoelectronic Properties

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Authors: Iqra Ramzan, Matthew O. Blunt, Ivan P. Parkin, Claire J. Carmalt
Cited by: 2
References: 63

Abstract

High Resolution Image Download MS PowerPoint Slide The ability to deposit high-quality SnO 2 thin films using simple, scalable techniques such as aerosol-assisted chemical vapor deposition (AACVD) has increased its potential for optoelectronic applications, including photovoltaics, displays, and smart windows. However, optimizing the structural and electronic properties of SnO 2 requires a deeper understanding of how deposition parameters influence film growth. To the best of our knowledge, the optimization of SnO 2 films using SnCl 4 as a precursor via AACVD has been largely overlooked in the literature. This study addresses that gap by selectively investigating the effects of solvent composition, deposition temperature, and misting time on the microstructure, optical transparency, and electrical performance of the SnO 2 films. Residual chlorine in the films was detected and quantified. The results demonstrate that careful control of solution chemistry and deposition conditions enabled the fabrication of SnO 2 films with high transparency and low resistivity, comparable to those of doped systems. Importantly, these insights can also pave the way for further optimization of commercially available fluorine-doped tin oxide (FTO) films, which are widely deposited via CVD, extending the industrial relevance of this work.

Fields of Study & Subjects

ZnO doping and properties Thin-Film Transistor Technologies Gas Sensing Nanomaterials and Sensors

Publication details

Journal / source
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Volume
18
Issue
13
Pages
19364–19379
Publication date
26 March 2026
Language
EN