Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO 2 /Al-Doped TiO 2 Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications

ACS Applied Materials & Interfaces 2026 Open access

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Authors: Dae Seon Kwon, Kun Hee Ye, In Soo Lee, Jonghoon Shin, Junil Lim, Tae Kyun Kim, Haengha Seo, Heewon Paik, Haewon Song, Seungheon Choi, Jung-Hae Choi, Cheol Seong Hwang
DOI: 10.1021/acsami.6c04008
Cited by: 1
References: 54

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Advanced Memory and Neural Computing

Publication details

Journal / source
ACS Applied Materials & Interfaces
Publisher
American Chemical Society (ACS)
Volume
18
Issue
23
Pages
32837–32848
Publication date
6 June 2026
Language
EN