Ta Phase Engineering for Defect-Controlled Reliable Switching in Ultrathin TaO x Memristors
Abstract
memristors suitable for in-memory and neuromorphic computing applications.
Fields of Study & Subjects
Advanced Memory and Neural Computing
Ferroelectric and Negative Capacitance Devices
Transition Metal Oxide Nanomaterials
Publication details
- Journal / source
- ACS Applied Materials & Interfaces
- Publisher
- American Chemical Society (ACS)
- Volume
- 18
- Issue
- 25
- Pages
- 35599–35610
- Publication date
- 20 June 2026
- Language
- EN