Angular Emission Properties of Strained Transition-Metal Dichalcogenides in the Low Strain Regime

ACS Applied Materials & Interfaces 2026 Open access

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Authors: Lee Grimberg, Svyatoslav Kostyukovets, Nilanjan Basu, Moshe G. Harats
DOI: 10.1021/acsami.6c05008
Cited by: 0
References: 39

Abstract

Monolayers of transition-metal dichalcogenides have shown that uniaxial strain changes both the photoluminescence emission energy and intensity. The changes are attributed to the band-structure evolution under tensile strain, where both the bandgap decreases and a direct-to-indirect transition occurs. This was shown for relatively high strains, whereas this is not the case at low strain values

Fields of Study & Subjects

Organic and Molecular Conductors Research 2D Materials and Applications Chalcogenide Semiconductor Thin Films

Publication details

Journal / source
ACS Applied Materials & Interfaces
Volume
18
Issue
20
Pages
29337–29344
Publication date
15 May 2026
Language
EN