Nanometer-Thick Films of Ta-Doped Sb 2 Te 3 /TiTe 2 Superlattice-Like Nanostructures for Phase-Change Memory Data Storage

With growing demand for efficient data storage, phase-change memory (PCM) has emerged as a leading candidate for next-generation storage class memory (SCM) devices. In this study, we developed a high-performance PCM with a Ta-doped Sb 2 Te 3 (TST)/TiTe 2 (TT) superlattice-like (SLL) structure. Using an industry-friendly sputtering process, TST was combined with TT to create a thermal confinement effect that enhances low-power, high-speed performance. The optimized SLL structure shows well-aligned c-plane growth and distinct van der Waals gaps, as confirmed by X-ray diffraction and transmission electron microscopy. The fabricated PCM device demonstrates notable improvements, including 15 ns switching and reduced operating voltage, owing to efficient thermal management by the TT layer. This study highlights the potential of SLL structures to advance PCM technology and provides a pathway for scalable, high-speed, low-power SCM solutions.