Correction to “Hf/Zr Superlattice-Based High-κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS”

ACS Nano 2026 Open access

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Authors: Taeyoung Song, Sanghyun Kang, Yu Hsin Kuo, Jiayi Chen, Lance Fernandes, Nashrah Afroze, Mengkun Tian, Hyoung Won Baac, Changhwan Shin, Asif Islam Khan
DOI: 10.1021/acsnano.6c01243
Cited by: 0

Fields of Study & Subjects

Semiconductor materials and devices Ferroelectric and Negative Capacitance Devices Copper Interconnects and Reliability

Publication details

Journal / source
ACS Nano
Volume
20
Issue
8
Pages
7384–7384
Publication date
16 February 2026
Language
EN