Surface Acoustic Wave-Guided Reconfigurable Memristor

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Authors: S K Kim, Jang Woo Lee, 류현승, T H Kim, Hayoung Ko, Soo Ho Choi, Young Chul Kim, Kai Qi, Ilya V. Novikov, Jeong‐Seok Nam, D K Kim, Hyeong Chan Suh
+7 more Mun Seok Jeong, Vincent Tung, Ki Kang Kim, Y. H. Ahn, Keekeun Lee, Sungjoo Lee, Il Jeon
Cited by: 1
References: 60

Abstract

Neuromorphic computing requires memory elements that can emulate both nonvolatile and volatile operation. However, achieving reconfigurability without trade-offs in performance or device fatigue remains a critical challenge. Conventional electrically driven memristors face difficulties in maintaining repetitive volatile states while preserving their nonvolatile state, which poses a major challenge for achieving reliable reconfigurability. Here, we report a surface acoustic wave (SAW)-stimulated memristor using a two-dimensional (2D) transition metal dichalcogenide monolayer MoS2 that achieves reconfigurable memory operation in a reversible volatile mode enabled by acousto-electric modulation. SAW excitation provides contactless, strain-based control of the 2D material conductance for memristor operation, allowing dynamic and nondestructive volatile behavior without deteriorating the electrically programmed nonvolatile state. We leverage these tunable temporal dynamics to realize a SAW-driven memristive reservoir based on 2D monolayer MoS2, achieving 96.1% accuracy in a character classification task.

Fields of Study & Subjects

Advanced Memory and Neural Computing Neural Networks and Reservoir Computing 2D Materials and Applications

Publication details

Journal / source
ACS Nano
Publisher
American Chemical Society (ACS)
Volume
20
Issue
29
Pages
20530–20542
Publication date
16 July 2026
Language
EN