Comparative Study of Ni Doping (0–0.3 wt %) in Bi 2 Se 3 Polycrystalline Materials Synthesized via a Solvothermal Method: Structural, Optical, and Thermoelectric Analysis

High Resolution Image Download MS PowerPoint Slide Nickel-doped bismuth selenide (Bi 2 Se 3 ) polycrystalline material, synthesized via a solvothermal method, emerged as a dual-functional material for mid-temperature optoelectronic and thermoelectric applications. Structural analysis revealed a rhombohedral phase with a new (0 1 8) peak and a 39% reduced crystallite size alongside morphological transitions to spherical and rod-like grains. Nickel doping narrowed the optical bandgap by 50%, enabling broadband absorption (317–678 nm) and inducing a 500 nm photoluminescence redshift for near-infrared emission. Thermoelectrically, nickel doping enhanced the electrical conductivity by 220% at 425 K while maintaining a high Seebeck coefficient and reducing the lattice thermal conductivity by 19%. These coordinated improvements yielded a record thermoelectric figure of merit (ZT = 1.15 at 525 K) for Ni 0 . 3 Bi 2 Se 3 ─a 259% enhancement over undoped Bi 2 Se 3 . The work establishes nickel-doped Bi 2 Se 3 as a scalable and cost-effective material for high-efficiency photonic devices and waste-heat recovery systems, addressing critical challenges in sustainable energy technologies in the mid-temperature range.