Symmetry Breaking and Berry Curvature in 2D Janus γ-Ge 2 XY (X, Y = S, Se, and Te)

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Authors: Dongchul Sung, Suklyun Hong
Cited by: 0
References: 77

Abstract

High Resolution Image Download MS PowerPoint Slide Two-dimensional (2D) Janus materials have recently attracted considerable attention as promising building blocks for next-generation multifunctional nanoscale devices owing to the unconventional physical phenomena arising from their intrinsic structural asymmetry. In this study, we demonstrate that the sombrero-shaped electronic dispersion in monolayer Janus γ-Ge 2 XY (X, Y = S, Se, Te) produces a pronounced Berry curvature. To elucidate the spin-resolved origin of this Berry-curvature response, we incorporate spin–orbit coupling (SOC) into the band-structure calculations, which reveals momentum-dependent Zeeman-type spin splitting along the Γ-centered inverted-sombrero rim as well as opposite spin polarizations at the K 1 and K 1 ′ valleys. Subsequent Berry-curvature analyses show that γ-Ge 2 SSe and γ-Ge 2 SeTe possess comparable magnitudes of approximately 129 and 110 Å 2, respectively, but with opposite signs at K 1 and K 1 ′. Remarkably, γ-Ge 2 STe exhibits an even larger Berry curvature of about 180 Å 2, underscoring its enhanced potential for valleytronic and spintronic applications.

Fields of Study & Subjects

2D Materials and Applications Topological Materials and Phenomena Magnetic properties of thin films

Publication details

Journal / source
ACS Omega
Volume
11
Issue
10
Pages
15842–15849
Publication date
3 March 2026
Language
EN