Minimizing Extrinsic Effects in High-Pressure Raman of Monolayer WSe 2 through Substrate and Pressure-Transmitting Medium Control

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Authors: J. R. SOUSA, Ramon Sampaio Ferreira, Alexandre Cavalheiro Dias, Ian Rodrigues do Amaral, Alfonso San-Miguel, Rafael S. Alencar, A. G. Souza Filho
Cited by: 1
References: 50

Abstract

High Resolution Image Download MS PowerPoint Slide We present a comprehensive study of the Raman spectra of monolayer WSe 2 under high pressure up to 40 GPa, focusing on the influence of both the substrate and the pressure-transmitting medium (PTM). By using diamond as the substrate, which minimizes strain transfer compared to conventional Si/SiO 2, we isolate the intrinsic vibrational response of monolayer WSe 2 from substrate-induced effects. Our results show that the enhancement of LA-related second-order modes occurs only at pressures >15 GPa, much higher than in Si/SiO 2 -supported samples, reflecting the weaker strain coupling to diamond. However, once the PTM loses hydrostaticity, non-uniform strain rapidly intensifies these modes. The role of strain-induced disorder is further evidenced by the appearance of wrinkles after decompression, which lead to local symmetry breaking and activate the normally forbidden B 2 g mode. Density functional theory (DFT) calculations indicate that the K-Λ valley crossover in the conduction band occurs at higher pressures than previously reported, but still much lower than those required to tune the second-order modes, thus suggesting that their intensification is predominantly driven by strain-induced disorder rather than electronic transitions. These findings provide practical guidelines for minimizing substrate- and PTM-related artifacts, thereby enabling more accurate and reproducible high-pressure Raman characterization of two-dimensional materials.

Fields of Study & Subjects

2D Materials and Applications Graphene research and applications Thermal properties of materials

Publication details

Journal / source
ACS Omega
Publisher
American Chemical Society (ACS)
Volume
11
Issue
7
Pages
12472–12478
Publication date
10 February 2026
Language
EN