Modeling of Au Migration and Analysis of Au-Doped HgCdTe Photodetectors
Abstract
Investigation of diffusion coefficients and activation energies constitutes a fundamental aspect of dopant characterization studies. In this study, a diffusion model for Au incorporation in vacancy-doped HgCdTe has been established, investigating the temperature-dependent and Hg vacancy concentration-dependent diffusion behavior across different experimental conditions. This study further examined the correlation between the Au activation energy and HgCdTe composition. The fabricated very long wavelength infrared photodetectors exhibited characteristic Au-doped electrical properties, validating the implemented doping strategy. These findings provide essential guidance for optimizing the Au doping process and establishing activation energy parameters with varying HgCdTe compositions.
Fields of Study & Subjects
Advanced Semiconductor Detectors and Materials
Semiconductor Quantum Structures and Devices
Ocular and Laser Science Research
Publication details
- Journal / source
- ACS Omega
- Publisher
- American Chemical Society (ACS)
- Volume
- 11
- Issue
- 8
- Pages
- 13983–13988
- Publication date
- 19 February 2026
- Language
- EN