Interfacial Defect Passivation and Leakage Suppression for Enhanced Detectivity in Organic Photodetectors via Octadecylphosphonic Acid Self-Assembled Monolayers

ACS Omega 2026 Open access

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Authors: Tae Hwan Kim, Gun woong Kim, Jin Hong Park, Ki Won Jeong, Seok Hwan Jang, Jaebum Jeong, Jun Young Kim
DOI: 10.1021/acsomega.6c02357
Cited by: 1
References: 40

Abstract

at -2 V, while maintaining stable photoresponse characteristics. This pronounced suppression of dark current is attributed to effective modulation of the electronic properties at the ITO/ZnO interface by the ODPA SAM, which suppresses interfacial leakage pathways. These results demonstrate that phosphonic acid-based SAMs provide an effective interfacial engineering strategy for achieving low-noise characteristics in inverted OPDs and offer a viable approach for the design of high-performance organic photodetectors.

Fields of Study & Subjects

Organic Electronics and Photovoltaics Conducting polymers and applications Molecular Junctions and Nanostructures

Publication details

Journal / source
ACS Omega
Publisher
American Chemical Society (ACS)
Volume
11
Issue
18
Pages
27525–27534
Publication date
30 April 2026
Language
EN