High-Performance Electrochemically Gated Single-Molecule Transistor Enabled by Interfacial Engineering

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Authors: Rui Wang, Yingjie Li, Siyu Yan, Yin Zhao, He Tian, Hongxiang Li
Cited by: 11
References: 49

Abstract

Molecular-scale transistors, particularly those with high performance, are critical for advancing nanoelectronics toward practical applications. However, developing high-performance single-molecule transistor materials remains a significant challenge. Here, we design and synthesize a series of diketopyrrolopyrrole (DPP)-based narrow bandgap molecular wires with tailored molecule-electrode coupling. The molecular wire DPP-C-SMe, featuring electronic decoupling at the molecule-electrode interface, exhibits remarkable electrochemical gated modulation (>200-fold) and a low subthreshold swing (105 mV dec –1 ) within a 1 V potential window─significantly surpassing its coupled counterpart and ranking among the highest-performing single-molecule electrochemical transistors reported to date. Through combined conductance measurements, transition voltage spectroscopy (TVS), and DFT calculations, we elucidate that the electronic decoupling in DPP-C-SMe reduces the off-state conductance by lowering the low-bias transmission coefficient, while the preserved favorable energy alignment enables efficient nonresonant/near-resonant switching under electrochemical gating. This cooperative design principle is the key to its superior transistor performance. These findings provide a new strategic design principle that synergistically integrates a narrow-band gap molecular core with tailored interfacial engineering for high-performance single-molecule electrochemical transistors and advances the molecular-scale control of charge transport in functional nanoelectronics.

Fields of Study & Subjects

Molecular Junctions and Nanostructures Organic Electronics and Photovoltaics Surface Chemistry and Catalysis

Publication details

Journal / source
Journal of the American Chemical Society
Publisher
American Chemical Society (ACS)
Volume
148
Issue
4
Pages
3987–3994
Publication date
19 January 2026
Language
EN