Capturing and Editing Te-Deficient Phases in Two-Dimensional Molybdenum Telluride Compound

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Authors: Xiaolong Xu, Shuangquan Qu, Roger Guzmán, Mingzhu Xu, Bo Han, Mengting Huang, Yiming Ding, Binbin Zhang, Shibo Wang, Wenlei Fu, Yiwen Song, Shiqi Yang
+8 more Huixia Yang, Yu Zhang, Yuan Xiao Ma, Ruiwen Shao, Peng Gao, Wu Zhou, Yu Ye, Yeliang Wang
Cited by: 0
References: 42

Abstract

Phase engineering of stoichiometric two-dimensional materials and their heterostructures remains a formidable challenge due to the thermodynamic stability disparity among the stoichiometric phases. Here, we report a dynamic-equilibrium approach (DEA) to access Te-deficient polymorphs in the Mo–Te system. By dynamically balancing tellurium vacancy generation and refilling, we drive selective phase transitions along divergent pathways. Starting from 1T′-MoTe 2, we access three distinct Te-deficient phases: a novel van der Waals (vdW) Mo 5 Te 8 with a high density of mirror-twin boundaries, a Chevrel-type nonlayered Mo 3 Te 4, and a quasi-1D vdW Mo 6 Te 6 . These transitions proceed through Te-vacancy-initiated nucleation, followed by epitaxial templating at phase boundaries, which transforms the polycrystalline matrix into single-crystal phases. Sequentially modulating the Te chemical potential allows for the on-demand synthesis of atomically sharp heterostructures, demonstrating in situ phase editing. Moreover, we achieved wafer-scale synthesis of uniform Te-deficient phases (Mo 5 Te 8, Mo 6 Te 6 ) by depositing a Mo capping layer to precisely regulate Te vacancy concentrations across the entire substrate. This scalable control enables the fabrication of phase-controlled heterostructure device arrays, underscoring their potential for phase-programmable electronics. This work establishes a defect-mediated pathway to Te-deficient phases and heterostructures.

Fields of Study & Subjects

2D Materials and Applications Transition Metal Oxide Nanomaterials Topological Materials and Phenomena

Publication details

Journal / source
Journal of the American Chemical Society
Volume
148
Issue
5
Pages
5486–5495
Publication date
28 January 2026
Language
EN