Unraveling Synergistic Dual-Element Doping Mechanisms in Solid-State Synthesis via Atomic Layer Deposition-Enabled Model Systems

Journal of the American Chemical Society 2026

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Authors: Yifan Wu, Tianye Xie, Xincan Cai, Weiyi Lin, Pu Yan, Nana Li, Rongliang Shang, Qing Zhang, Yingdong Deng, Guohui Zhong, Wenge Yang, Hongliang Dong
+2 more Fan Zheng, Jin Xie
DOI: 10.1021/jacs.5c23086
Cited by: 1
References: 69

Abstract

O, we reveal a unique synergistic effect between Al and W: whereas W alone tends to segregate at the particle surface, the presence of Al facilitates its lattice incorporation. Notably, lattice-incorporated W significantly enhances rate capability and high-voltage cycling stability, attributed to robust W-O bonding within the host lattice. This ALD-based model system provides a versatile and broadly applicable platform for elucidating fundamental doping mechanisms in solid-state synthesis, offering critical insights into complex multidopant interactions.

Fields of Study & Subjects

Semiconductor materials and devices Electrocatalysts for Energy Conversion Machine Learning in Materials Science

Publication details

Journal / source
Journal of the American Chemical Society
Publisher
American Chemical Society (ACS)
Volume
148
Issue
20
Pages
20434–20447
Publication date
14 May 2026
Language
EN