Origin of the Unusual Narrowband Near-Infrared Emission from Cr 3+ -Doped Oxides

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Authors: Yu Xiao, Wenge Xiao, Tianxiang Zheng, Hongyun Zhao, Ping Du, Rui Zhang, Chenjie Lou, Mingxue Tang, Ming-Xing Chen, Wanliang Yang, Ling-Dong Sun, Chun-Hua Yan
Cited by: 4
References: 61

Abstract

Near-infrared (NIR) light is the basis of many optical and photonic applications. Trivalent chromium ions (Cr 3+ ) are excellent NIR emitters that can be efficiently excited by broadband blue light. Although the broadband NIR emission of the 4 T 2 → 4 A 2 transition can be largely regulated via crystal field engineering, the narrowband (R-line) emission of the 2 E → 4 A 2 transition is usually limited to the far-red region near 690 nm and remains much less explored. Here, we reveal that the unusual NIR R-line emission (>750 nm) in Cr 3+ -doped Sr M 12 O 19 (M = Al and Ga) magnetoplumbites, which was previously attributed to the exchange-coupled Cr 3+ –Cr 3+ pairs, arises from a unique isolated Cr 3+ center with exceptionally strong covalency of Cr 3+ –O 2– bonds. Furthermore, the experimental and computational results collectively indicate that the pertinent bond angles, along with the inductive effect of the neighboring cations, play a pivotal role in regulating the Cr 3+ –O 2– covalent interaction and thus the relative energy position of the 2 E level that determines the radiative pathways of the excited Cr 3+ . These findings not only provide a new dimension for manipulating the excited-state processes and thus the luminescence properties of Cr 3+ but also highlight its great potential for use as an activator for broadband visible-light excitable, narrowband NIR-emitting materials.

Fields of Study & Subjects

Luminescence Properties of Advanced Materials Solid State Laser Technologies Advanced Photocatalysis Techniques

Publication details

Journal / source
Journal of the American Chemical Society
Publisher
American Chemical Society (ACS)
Volume
148
Issue
20
Pages
20479–20488
Publication date
15 April 2026
Language
EN