A pulsed optoelectronic microwave source with high power and frequency tunability

Microwave sources are central to modern technologies ranging from radar and directed energy to medical applications, yet conventional electronic approaches face long-standing trade-offs between output power and tunability. Optoelectronic techniques offer a promising alternative by combining the broad bandwidth of optical systems with the high power-handling capability of wide-bandgap semiconductors. Here we show an optoelectronic microwave source based on fast-response silicon carbide, enabling picosecond-scale control of photogenerated carrier lifetime while sustaining power-handling capacities up to 55 MW. The system generates continuously tunable pulsed microwave emission across the P–L band, delivering peak output power exceeding 1 MW over the 0.25–1.3 GHz range and exhibiting stable nanosecond-scale pulse operation. The generated pulses exhibit low timing jitter and highly efficient power combining in array operation. These results demonstrate a scalable route toward high-power, broadband, and flexible microwave sources, enabling applications that demand simultaneous control over frequency, energy, and spatial distribution. The authors showcase a fast‑response silicon‑carbide optoelectronic microwave source that delivers picosecond carrier‑lifetime control and supports power handling up to 55 MW. It offers continuously tunable P–L‑band pulses with >1 MW peak output over 0.25–1.3 GHz.