Regulating perovskite crystallization kinetics at laser scribe lines for efficient and stable perovskite modules

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Authors: Yihuan Xie, Baojin Fan, Hongxiang Li, Chenxiang Gong, Zhaoyang Chu, Shaohua Zhang, Yong Zhang, Xiaotian Hu, Yiwang Chen
Cited by: 6
References: 62

Abstract

The power conversion efficiency (PCE) of perovskite solar cells (PSCs) has approached that of silicon-based counterparts, yet their limited long-term stability remains a critical obstacle to commercialization. In this study, laser scribing is identified as a crucial factor affecting the stability of perovskite solar modules (PSMs), as evidenced by the differing degradation rates observed between PSMs and PSCs. Detailed characterization reveals that the P1 scribe areas exhibit poor crystalline quality and accelerated degradation, primarily due to mismatched crystallization kinetics. Furthermore, the P2 and P3 scribing processes induce localized thermal damage, resulting in material decomposition that further undermines module stability. Therefore, we propose a strategy for regulation of perovskite crystallization kinetics by (E)-But-2-ene-1,4-diamine dihydrochloride, which promotes high-quality, preferentially oriented perovskite films to enhance their environmental tolerance. As a result, PSMs with aperture areas of 25 cm² and 100 cm² achieve impressive efficiencies of 24.70% and 23.89%, respectively. Notably, the 100 cm² PSM attains a certified record efficiency of 23.55%. Furthermore, unencapsulated PSMs retain 93% of their initial PCE after 3,120 hours of storage in ambient air (~15% RH), following the ISOS-D-1 standard. This work provides a module-level perspective for advancing the understanding and improvement of long-term stability in perovskite photovoltaics.

Fields of Study & Subjects

Perovskite Materials and Applications Thin-Film Transistor Technologies Silicon and Solar Cell Technologies

Publication details

Journal / source
Nature Communications
Publisher
Springer Science and Business Media LLC
Volume
17
Issue
1
Publication date
20 February 2026
Language
EN