Ferroelectricity-modulated asymmetric van der Waals heterostructure for ultralow-power neuromorphic synapse and logic-in-memory operations

Vertical integration of two-dimensional materials holds tremendous potential for integrated sensing, memory, and computing applications, yet it still confronts challenges such as single device functionality, limited in-memory logic capability, and high power consumption. To address these issues, we propose an asymmetric van der Waals integration strategy based on an In₂Se₃/MoOₓ/MoS₂/graphene heterojunction, which integrates five reconfigurable logic gates (AND, OR, NOT, NOR, and NAND), dual-mode photodetection (~10 fA dark current, a high responsivity of 89.3 mA/W and a specific detectivity of 1.4 × 10¹¹Jones), and low-power neurosynaptic functions (7-bit conductance states, subfemtojoule energy consumption) into a single device. By virtue of these characteristics, the device enables high-precision image recognition, simulation of classical Pavlovian conditioning and single-pixel dual-band optical imaging. This work paves a feasible path for the development of multifunctionally integrated sensor-memory-computing devices. Neuromorphic devices are currently constrained by their limited functionality. Zhi et al. report a ferroelectric heterostructure device that integrates Boolean, optoelectronic synaptic and photodetection operations, offering a pathway to realizing integrated sensing-memory-computing systems.