In-fibre logic and memory via tuneable passivation–corrosion
Abstract
Textile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings. However, existing textile electronic systems are typically built on von Neumann architecture and rigid chips, limiting their seamless integration with clothing. Here, we propose a single-fibre logic/memory electronic device based on interface passivation-corrosion whose functions do not depend on traditional carrier heterojunction interfaces. The same fibre can be switched to operate as either a diode or a memristor. The diode mode remains stable under higher voltages and longer cycling periods than the state-of-the-art anion-cation heterojunction fibres. The fibre electronics are highly stretchable (up to 50%), and are compatible with industry-standard weaving techniques. We also demonstrate the application of these fibres in "AND" and "OR" logic gates, neuromorphic synapses, and textile memristor arrays. Regulated passivation-corrosion-enabled logic and memory in fibres offers a promising avenue for the next-generation textile computing.
Fields of Study & Subjects
Advanced Memory and Neural Computing
Advanced Sensor and Energy Harvesting Materials
Transition Metal Oxide Nanomaterials
Publication details
- Journal / source
- Nature Communications
- Publisher
- Springer Science and Business Media LLC
- Volume
- 17
- Issue
- 1
- Publication date
- 31 March 2026
- Language
- EN