Ultra-high density perovskite nanowire array memristor-based multi-layer perceptron

Passive memristor crossbars present a high-density and low-power platform for neuromorphic computing. Although perovskite memristors present advantages such as re-configurability between electrochemical metallization and valence change mechanisms compared to traditional oxides, they face issues with uniformity, variability, and filamentary instability, which impede their large-scale integration. This work demonstrates that these limitations are overcome by a three-dimensional perovskite nanowire array architecture, where a precisely engineered ITO barrier is instrumental in maintaining controlled, analog conductance modulation. The resulting memristors exhibit 139 non-overlapping Ohmic conduction states within an optimal analog range (10–100 µS), long retention ( > 10⁶ s), endurance exceeding 4 × 10⁵ cycles, an asymmetric non-linearity factor of 0.3, and minimal variability (device-to-device