Origin of circular and triangular pores in electron-irradiated hexagonal boron nitride

Abstract For nearly two decades, it has been known that electron irradiation of hexagonal boron nitride (hBN) in a transmission electron microscope leads to the formation of triangular pores. This has been attributed to the lower displacement threshold energy of boron, with or without the assistance of an inelastic scattering event, typically assuming that chemical processes caused by residual gases can be neglected. In this study, in contrast to previous high-vacuum experiments, we show that electron irradiation in ultra-high vacuum leads to circular pores, whereas even small amounts of oxygen in the atmosphere during the experiment drive the pores to grow into triangle shapes with nitrogen-terminated edges. This result is shown to hold for samples of different types and from different manufacturers, and at different electron energies as well as focused scanning and defocused stationary beams. Our results explain the chemical origin of triangular pores in hBN and demonstrate a deterministic way to create atomically defined pores in this important 2D material.