Gate structuring on n-type bilayer MoS2 field-effect transistors for ultrahigh current density

Nature Materials 2026

View at publisher
Authors: Junyoung Kwon, Kyoung Yeon Kim, Dongwon Jang, Min Seok Yoo, Alum Jung, Dong‐Su Ko, Yoonhoo Ha, Huije Ryu, Woon Ih Choi, Yeonchoo Cho, Changhyun Kim, Eunji Yang
+9 more Eun-Kyu Lee, Chang‐Seok Lee, Sang Won Kim, Uihui Kwon, Dae Sin Kim, Sung Kyu Lim, Kyung‐Eun Byun, Minsu Seol, Jeehwan Kim
DOI: 10.1038/s41563-025-02452-y
Cited by: 4
References: 56

Fields of Study & Subjects

2D Materials and Applications Advancements in Semiconductor Devices and Circuit Design Graphene research and applications

Publication details

Journal / source
Nature Materials
Publisher
Springer Science and Business Media LLC
Volume
25
Issue
5
Pages
824–831
Publication date
9 January 2026
Language
EN