Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors

Nature Materials 2026

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Authors: Saifei Gou, Yuxuan Zhu, Zhejia Zhang, Menglin Huang, Jinshu Zhang, Xiangqi Dong, Mingrui Ao, Qicheng Sun, Zhenggang Cai, Yan Hu, Yufei Song, Jiahao Wang
+21 more Haojie Chen, Yuchen Tian, Xinliu He, Jieya Shang, Zhengjie Sun, Qihao Chen, Yang Liu, Zihan Xu, Xiaofei Yue, Chunxiao Cong, Yin Wang, Liwei Liu, Xiaojun Tan, Mengjiao Li, Chen Yang, Hao Meng, Min Liu, Huihui Li, Shiyou Chen, Peng Zhou, Wenzhong Bao
DOI: 10.1038/s41563-025-02470-w
Cited by: 6
References: 57

Fields of Study & Subjects

2D Materials and Applications Ferroelectric and Negative Capacitance Devices Neural Networks and Reservoir Computing

Publication details

Journal / source
Nature Materials
Publisher
Springer Science and Business Media LLC
Volume
25
Issue
5
Pages
747–754
Publication date
14 January 2026
Language
EN